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| CMKT2207 ULTRAminiTM SURFACE MOUNT COMPLEMENTARY TRANSISTORS Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMKT2207 type is a dual complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a ULTRAminiTM surface mount package, designed for small signal general purpose and switching applications. Marking Code is K70. SOT-363 CASE MAXIMUM RATINGS: (TA=25C) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Power Dissipation PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance JA NPN (Q1) 75 40 6.0 600 350 -65 to +150 357 PNP (Q2) 60 60 5.0 UNITS V V V mA mW C C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted) SYMBOL ICBO ICBO ICBO ICBO IEBO ICEV ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE TEST CONDITIONS VCB=60V VCB=50V VCB=60V, TA=125C VCB=50V, TA=125C VEB=3.0V VCE=60V, VEB(OFF)=3.0V VCE=30V, VEB(OFF)=500mV IC=10A IC=10mA IE=10A IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=1.0V, IC=150mA VCE=10V, IC=500mA NPN (Q1) MIN MAX 10 10 10 10 75 40 6.0 0.3 1.0 0.6 1.2 2.0 35 50 75 100 300 50 40 PNP (Q2) MIN MAX 10 10 50 60 60 5.0 0.4 1.6 1.3 2.6 75 100 100 100 300 50 UNITS nA nA nA nA nA nA nA V V V V V V V R0 ( 9-October 2001) Central SYMBOL fT fT Cob Cib Cib hie hie hre hre hfe hfe hoe hoe rb'Cc NF ton td tr toff ts ts tf tf TM Semiconductor Corp. CMKT2207 ULTRAminiTM SURFACE MOUNT COMPLEMENTARY TRANSISTORS NPN (Q1) MIN MAX 300 8.0 25 2.0 8.0 0.25 1.25 8.0 4.0 50 300 75 375 5.0 35 25 200 150 4.0 10 25 225 60 PNP (Q2) MIN MAX 200 8.0 30 45 10 40 100 80 30 UNITS MHz MHz pF pF pF k k x10-4 x10-4 TEST CONDITIONS VCE=20V, IC=20mA, f=100MHz VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VEB=2.0V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCB=10V, IE=20mA, f=31.8MHz VCE=10V, IC=100A, RS=1.0k, f=1.0kHz VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=30V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=30V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA mhos mhos ps dB ns ns ns ns ns ns ns ns SOT-363 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 Q1 = NPN Q2 = PNP R0 ( 9-October 2001) |
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